KyteLabs InfoBase - Semiconductor Data Last modified: 2010-01-31 (16160)

9 Grenzwerte
Maximum Ratings

9.3 Feldeffekt-Transistoren
Field-Effect Transistors

9.3.5 Selbstsperrende Silizium-MOS-Kleinsignaltypen
Silicon Small-Signal Enhancement-Mode MOS Devices (Small-Signal MOSFETs)

Alle Angaben sind absolute Grenzwerte, wenn nichts anderes angegeben ist. Die Spannungs- und Stromangaben sind als Betrag aufzufassen. Vorzeichen müssen entsprechend Betriebsart und Polarität des Halbleitermaterials gesetzt werden.

All values are absolute maximum ratings unless otherwise specified. Voltage and current ratings are given as magnitude, where the sign has to be set according to operating condition and polarity of the semiconductor material.

Hoch - UpRunter - Down  BFW27  
PT:
@TA:
200
25
mW
°C
UDSS:
UGSS:
ID:
30
±40
25
V
V
mA
RthJA:
TJ:
TSTG:
520
150
–50...
+200
K/W
°C
 
°C
Ref *? Tfk68 15469

Hoch - UpRunter - Down  BS250BS170BS112BS212BS107BS192BS208BS108BS189  
PT:
@TC:
0.83
25
0.83
25
0.83
25
0.83
25
0.83
25
0.83
25
0.83
25
0.83
25
0.83
25
W
°C
UDSS:
UDGS:
UGS (PK):
ID:
45
45
±20
0.18
60
60
±20
0.3
170
170
±20
0.2
170
170
±20
0.2
200
200
±20
0.12
200
200
±20
0.18
200
200
±20
0.2
200
200
±20
0.23
200
200
±20
0.25
V
V
V
A
RthJA:
TJ:
TSTG:
150
150
–55...
+150
150
150
–55...
+150
150
150
–55...
+150
150
150
–55...
+150
150
150
–55...
+150
150
150
–55...
+150
150
150
–55...
+150
150
150
–55...
+150
150
150
–55...
+150
K/W
°C
 
°C
Ref *? 110 Itt90 14451

Hoch - UpRunter - Down  
IRFD1Z1
 
IRFD1Z3
 IRFD111 
IRFD9121
 IRFD113 
IRFD9123
 
PT:
DP:
ID:
@TC:
1.0
8.0
0.5
25
1.0
8.0
0.4
25
1.0
8.0
1.0
25
1.0
8.0
0.8
25
W
mW/K
A
°C
UDS:
UGS:
IDM:
60
±20
2.0
60
±20
1.5
60
±20
4.0
60
±20
3.0
V
V
A
UDGR:
@RGS:
60
1.0
60
1.0
60
1.0
60
1.0
V
MOHM
RthJA:
TJ:

TSTG:
120
–55...
+150
–55...
+150
120
–55...
+150
–55...
+150
120
–55...
+150
–55...
+150
120
–55...
+150
–55...
+150
K/W
 
°C
 
°C
Ref *? Irf82 14461

Hoch - UpRunter - Down VP0104
N3
VP0106
N3
VP0109
N3
VP0109
N9
VP0109
N2
 
PT:
@TC:
1.0
25
1.0
25
1.0
25
1.0
25
3.5
25
W
°C
UDSS:
UDGS:
UGS:
ID:
IDM:
40
40
±20
±0.25
±0.8
60
60
±20
±0.25
±0.8
90
90
±20
±0.25
±0.8
90
90
±20
±0.25
±1.0
90
90
±20
±0.45
±1.0
V
V
V
A
A
RthJA:
RthJC:
TJ:

TSTG:

TL:
170
125
–55...
+150
–55...
+150
300
170
125
–55...
+150
–55...
+150
300
170
125
–55...
+150
–55...
+150
300
240
125
–55...
+150
–55...
+150
300
125
35
–55...
+150
–55...
+150
300
K/W
K/W
 
°C
 
°C
°C
Ref *? Sup98 14452

Hoch - UpRunter - Down  
IRFD1Z0
 
IRFD1Z2
 IRFD110 
IRFD9120
 IRFD112 
IRFD9122
 
PT:
DP:
ID:
@TC:
1.0
8.0
0.5
25
1.0
8.0
0.4
25
1.0
8.0
1.0
25
1.0
8.0
0.8
25
W
mW/K
A
°C
UDS:
UGS:
IDM:
100
±20
2.0
100
±20
1.5
100
±20
4.0
100
±20
3.0
V
V
A
UDGR:
@RGS:
100
1.0
100
1.0
100
1.0
100
1.0
V
MOHM
RthJA:
TJ:

TSTG:
120
–55...
+150
–55...
+150
120
–55...
+150
–55...
+150
120
–55...
+150
–55...
+150
120
–55...
+150
–55...
+150
K/W
 
°C
 
°C
Ref *? Irf82 14461

Hoch - UpRunter - Down  BSS91  
PT:
ID:
IDM:
@TC:
1.5
0.35
1.4
25
W
A
A
°C
UDS:
UGS (PK):
200
±20
V
V
UDGR:
@RGS:
200
20
V
kOHM
RthJA:
RthJC:
TJ:

TSTG:
300
83
–55...
+150
–55...
+150
K/W
K/W
 
°C
 
°C
Ref *? Sie87 14448

Hoch - UpRunter - Down  BSS93  
PT:
ID:
IDM:
@TC:
2.5
0.5
1.0
25
W
A
A
°C
UDS:
UGS:
200
±20
V
V
UDGR:
@RGS:
200
20
V
kOHM
RthJA:
RthJC:
TJ:
TSTG:
<188
<50
150
–25...
+150
K/W
K/W
°C
 
°C
Ref *? Sie80 15487

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